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250V N-Channel B-FET / Substitute of IRFS644 & IRFS644A
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General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converter and
switch mode power supplies.
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Features
- 14A, 250V, RDS(on) = 0.28W @VGS = 10V
- Low gate charge (typical 47 nC)
- Low Crss (typical 30 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
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