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IRLM110A

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100V N-Channel Logic Level A-FET

Features

  • Avalanche Rugged Technology
  • Rugged Gate Oxide Technology
  • Lower Input Capacitance
  • Improved Gate Charge
  • Extended Safe Operating Area
  • Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
  • Lower RDS: 0.336 Ω (Typ.)
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