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N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
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General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
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Features
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Fast switching speed
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rDS(ON) = 0.0019W (Typ), VGS = 10V
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rDS(ON) = 0.0027W (Typ), VGS = 4.5V
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Qg (Typ) = 110nC, VGS = 5V
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Qgd (Typ) = 31nC
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CISS (Typ) = 11000pF
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Applications
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