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ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

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Contents

General Description
Features
Applications
Product Status/Pricing/Packaging
Order Samples
Models
Qualification Support

General Description

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

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Features

  • Fast switching speed
  • rDS(ON) = 0.0019W (Typ), VGS = 10V
  • rDS(ON) = 0.0027W (Typ), VGS = 4.5V
  • Qg (Typ) = 110nC, VGS = 5V
  • Qgd (Typ) = 31nC
  • CISS (Typ) = 11000pF

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Applications

  • DC/DC converters

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Product Status/Pricing/Packaging      buy now

ProductProduct statusEco StatusPackage typeLeadsPacking methodPackage DrawingPackage Marking Convention**
ISL9N302AP3Lifetime BuyRoHS CompliantTO-220AB3RAIL TA03DLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: N302AP

Package marking information for product ISL9N302AP3 is available. Click here for more information .

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Models

Package & leadsConditionTemperature rangeSoftware versionRevision date
PSPICE
TO-220AB-3Electrical/Thermal-55°C to 175°COrcad 9.1Jan 19, 2001
Saber
TO-220AB-3Electrical/Thermal-55°C to 175°CSaber 5.1Jan 19, 2001

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Qualification Support

Click on a product for detailed qualification data

Product
ISL9N302AP3

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