The ISL9R8120P2 and ISL9R8120S3S are Stealth^TM diodes optimized for low loss performance in high frequency hard switched applications. The Stealth^TM family exhibits low reverse recovery current (I_RM(REC)) and exceptionally soft recovery under typical operating conditions.

This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I_RM(REC) and short t_a phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth^TM diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost.

Formerly developmental type TA49413.

• Soft Recovery . . . . . . . . . . .t_b / t_a > 5.5
• Fast Recovery . . . . . . . . . . . t_rr < 32ns
• Operating Temperature . . . . . . . .150°C
• Reverse Voltage. . . . . . . . . . . 1200V
• Avalanche Energy Rated

• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode