Hermetic Silicon Phototransistor
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General Description
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The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package.
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Features
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Hermetically sealed package
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Wide reception angle
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Device can be used as a photodiode by using the collector and base leads
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Datasheet
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Testing Conditions
- On-State Collector Current @ Ee = 1.5 mW/cm2 (GaAs), VCE = 5 V
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Product Status/Pricing/Packaging 
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Qualification Support
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