The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for improved noise immunity.

• High isolation voltage 7500 VAC Peak—1 second

• High BV_CEO minimum 70 Volts

• Current transfer ratio in selected groups:

• MOC8111M: 20% min.

• MOC8112M: 50% min.

• MOC8113M: 100% min.

• Maximum switching time in saturation specified

• Underwriters Laboratory (UL) recognized

•    (File #E90700, Vol. 2)

• IEC60747-5-2 approved (ordering option V)

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

• Appliance sensor systems

• Industrial controls