MOC8204M

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6-pin DIP High Voltage Phototransistor Output Optocoupler

General Description

The H11DXM and 4N38M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
MOC8204M Full Production ROHS Compliant $0.9 MDIP 6 BULK PDF Line 1:UNK
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MOC8204SM Full Production ROHS Compliant $0.82 MDIP 6 BULK PDF Line 1:UNK
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MOC8204SR2M Full Production ROHS Compliant $0.96 MDIP 6 TAPE REEL PDF Line 1:UNK
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Features

  • High voltage:
  • H11D1M, H11D2M, BVCER = 300V
  • H11D3M, BVCER = 200V
  • High isolation voltage:
  • 7500 VAC peak, 1 second
  • Underwriters Laboratory (UL) recognized File # E90700, Volume 2
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