The MOCD213M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.

• U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option "V" for VDE approval, i.e., MOCD213VM)
• Dual Channel Coupler
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Minimum Current Transfer Ratio 100% with Input Current of 10mA
• Minimum BV_CEO of 70 Volts Guaranteed
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500V_AC(rms) Guaranteed

• Feedback control circuits
• Interfacing and coupling systems of different potentials and impedances
• General purpose switching circuits
• Monitor and detection circuits