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N-Channel Enhancement Mode Field Effect Transitor
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General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
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Features
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12 A, 60 V. RDS(ON) = 0.15 W @ VGS = 10 V
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Low gate charge.
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Fast switching speed.
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High performance technology for low RDS(ON) .
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