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N-Channel Logic Level Enhancement Mode Field Effect Transistor
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General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
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Features
- 12A, 60V
RDS(ON) = 0.18W @ VGS = 5V
- Critical DC electrical parameters specified at elevated temperature.
- Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V.
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
- 175°C maximum junction temperature rating.
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