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60V N-Channel Enhancement Mode Field Effect Transistor
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General Description
This N-Channel MOSFET has been designed specifically
for low voltage, high speed switching applications i.e.
power supplies and power motor controls.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies).
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Features
- 12A, 60V
- RDS(ON) = 0.150W @ VGS = 10V
- Critical DC electrical parameters specified at elevated
temperature.
- Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
- 175°C maximum junction temperature rating.
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