These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply applications.

• Q1: 0.51A, 60V
  • R_DS(on) = 2W @ V_GS = 10V
  • R_DS(on) = 4W @ V_GS = 4.5V
• Q2: -0.34A, 60V
  • R_DS(on) = 5W @ V_GS = -10V
  • R_DS(on) = 7.5W @ V_GS = -4.5V
• High saturation current
• High density cell design for low R_DS(ON).
• Proprietary SuperSOT^TM-6 package design using copper lead frame for superior thermal and electrical capabilities