These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage applications requiring a low current high side switch.

• 0.51 A, 50 V.   R_DS(ON) = 2 W @ V_GS = 10 V.
• High density cell design for extremely low R_DS(ON).
• Proprietary SuperSOT^TM-6 package design using copper lead frame for superior thermal and electrical capabilities.
• High saturation current.