Dual N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionThese dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage applications requiring a low current high side switch. Product Status/Pricing/Packing
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Features
Applications
ModelsFor additional information please visit the Models page .
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