These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.

• -0.34 A, -50 V.
   
  • R_DS(ON) = 5 W @ V_GS = -10 V
  • R_DS(ON) = 7 W @ V_GS = -4.7 V
• Low gate charge
• Fast switching speed
• High performance trench technology for low R_DS(ON)
• SuperSOT^TM -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)