NDP6060L

60V N-Channel Logic Level Enhancement Mode Field Effect Transistor

General DescriptionGeneral Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Product Status/Pricing/PackagingProduct Status/Pricing/Packaging

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
NDP6060LFull ProductionRoHS Compliant$1.48TO-2203RAIL TA03DLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: NDP6060L

FeaturesFeatures


  • 48A, 60V. RDS(ON) = 0.025W @ VGS = 5V.
  • Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.
  • Critical DC electrical parameters specified at elevated temperature.
  • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
  • 175°C maximum junction temperature rating.
  • High density cell design for extremely low RDS(ON).
  • TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
 
English Chinese Japanese Korean
 X 

This datasheet is available in multiple languages

Select the desired translation from the list below.


Press ESCAPE, Click on X (right-top) or Click Out from the popup to close this window.