These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

• 64A, 60V. R_DS(ON) = 0.016W @ V_GS=10V.
• Critical DC electrical parameters specified at elevated temperature.
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
• 175°C maximum junction temperature rating.
• High density cell design for extremely low R_DS(ON).
• TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.