These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

• 1.3 A, 20 V. R_DS(ON) = 0.21W @ V_GS= 2.7 V, R_DS(ON) = 0.16 W @ V_GS= 4.5 V.
• Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
• High density cell design for extremely low R_DS(ON).
• Exceptional on-resistance and maximum DC current capability.