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NDS351N
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Contents

General Description
Features
Product Status/Pricing/Packaging
Order Samples
Application Notes
Qualification Support

General Description

For New Design see NDS351AN

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

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Features

  • 1.1A, 30V. RDS(ON) = 0.25W @ VGS= 4.5 V.
  • Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
  • High density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Compact industry standard SOT-23 surface mount package.

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Product Status/Pricing/Packaging      buy now

ProductProduct statusEco StatusPackage typeLeadsPacking methodPackage DrawingPackage Marking Convention**
NDS351NNot recommended for new designsRoHS CompliantSuperSOT3TAPE REEL PDFLine 1: &E&Y (Binary Calendar Year Coding)
Line 2: 351

Package marking information for product NDS351N is available. Click here for more information .

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Application Notes

AN-558: Introduction to Power MOSFETs and their Applications (200 K) Nov 20, 2009
 

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Qualification Support

Click on a product for detailed qualification data

Product
NDS351N

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