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30V Single N-Channel PowerTrench® MOSFET
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General Description
This N-Channel MOSFET are produced using
Fairchild’s proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance and
provide superior switching performance. These devices
are particularly suited for low voltage applications such
as notebook computer power management and other
battery powered circuits where fast switching, low inline
power loss, and resistance to transients are
needed.
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Features
-
10.8 A, 30 V
- RDS(ON) = 12 mW @ VGS = 10 V
- RDS(ON) = 17 mW @ VGS = 4.5 V
- Ultra-low gate charge
- High performance trench technology for extremely
low RDS(ON)
- High power and current handling capability
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