This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint package.

• 7.4 A, 20 V
• R_DS(ON) = 0.022 W @ V_GS= 4.5 V
• R_DS(ON) = 0.028 W @ V_GS= 2.7V
• Fast switching speed
• Low gate charge (11nC typical)
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability in a widely used surface mount package

• DC/DC converter
• Load switch