These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.

• N-Channel 6.3A, 30V, R_DS(ON)=0.035W @ V_GS=10V,
  P-Channel -4.8A, -30V, R_DS(ON)=0.065W @ V_GS=-10V.
• High density cell design for extremely low R_DS(ON).
• High power and current handling capability in a widely used surface mount package.
• Matched pair for equal input capacitance and power capability