These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

• -5.3 A, -20 V
• R_DS(ON) = 0.05W @ V_GS = -10 V
• R_DS(ON) = 0.065W @ V_GS = -6 V
• R_DS(ON) = 0.09W @ V_GS = -4.5 V
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability in a widely used surface mount package.