This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

• -5.3 A, -30 V
• R_DS(ON) = 50 mW @ V_GS= -10 V
• R_DS(ON) = 80 mW @ V_GS= -4.5V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability

• Power management
• Load switch
• Battery protection