NDS9936

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Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

  • 5A, 30V. RDS(ON) = 0.05 Ω @ VGS = 10V.
  • High density cell design for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package.
  • Dual MOSFET in surface mount package.
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