These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

• 5A, 30V. R_DS(ON) = 0.05 W @ V_GS = 10V.
• High density cell design for extremely low R_DS(ON).
• High power and current handling capability in a widely used surface mount package.
• Dual MOSFET in surface mount package.