These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

• Top mark packaging information for product NDS9953A is available.

Product	Product status	Eco Status	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
NDS9953A	Not recommended for new designs	RoHS Compliant	SO-8	8	TAPE REEL		Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &2 (2-Digit Date Code) &K Line 2: NDS Line 3: 9953A