These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC conversion and DC motor control where fast switching, low in-line power loss, and resistance to transients are needed.

• 3.7A, 30V. R_DS(ON) = 0.08 W @ V_GS = 10V.
• High density cell design for extremely low R_DS(ON).
• High power and current handling capability in a widely used surface mount package.
• Dual MOSFET in surface mount package.