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Dual N-Channel Enhancement Mode Field Effect Transistor
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC conversion and DC motor control where fast switching, low in-line power loss, and resistance to transients are needed.
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Features
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3.7A, 30V. RDS(ON) = 0.08 W @ VGS = 10V.
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High density cell design for extremely low RDS(ON).
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High power and current handling capability in a widely used surface mount package.
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Dual MOSFET in surface mount package.
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