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P-Channel Enhancement Mode Field Effect Transistor
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General Description
This 60V P-Channel MOSFET is produced using
Fairchild Semiconductor’s high voltage Trench process.
It has been optimized for power management
plications.
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Features
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-2.5A, -60V
- RDS(ON) = 300mW @ VGS = -10V
- RDS(ON) = 500mW @ VGS = -4.5V
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High density cell design for extremely low RDS(ON)
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High power and current handling capability in a widely
used surface mount package.
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