These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

• 4 A, 60 V. R_DS(ON) = 0.100 W @ V_GS = 10 V.
• High density cell design for extremely low R_DS(ON).
• High power and current handling capability in a widely used surface mount package.