Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

• -5A, -30V. RDS(ON) = 0.065 RDS(ON) = 0.3 W @ VGS = -10V, RDS(ON) = 0.1 RDS(ON) = 0.3 W @ VGS = -4.5V.
• High density cell design for extremely low RDS(ON).
• High power and current handling capability in a widely used surface mount package.