NDT454P

P-Channel Enhancement Mode Field Effect Transistor

General DescriptionGeneral Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Product Status/Pricing/PackagingProduct Status/Pricing/Packaging

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
NDT454PFull ProductionRoHS Compliant$1.07SOT-2234TAPE REEL PDFLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: 454

FeaturesFeatures


  • -5.9A, -30V. RDS(ON) = 0.05 W @ VGS = -10V, RDS(ON) = 0.07 W @ VGS = -6V, RDS(ON) = 0.09 W @ VGS = -4.5V.
  • High density cell design for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package.

ModelsModels

For additional information please visit the Models page.

Package & leadsConditionTemperature rangeSoftware versionRevision date
PSPICE
SOT-223-4Electrical25°CN/AN/A

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