The QRB1113/1114 consists of a infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converting optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle of .200 inch in diameter.

• No contact surface sensing
• Phototransistor output
• Focused for sensing specular reflection
• Daylight filter on photosensor
• Dust cover