RFD14N05LSM

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14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

General Description

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
RFD14N05LSM Full Production ROHS Compliant $0.55 TO-252(DPAK) 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
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RFD14N05LSM9A Full Production ROHS Compliant $0.59 TO-252(DPAK) 3 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:14N05L
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Features

  • 14A, 50V
  • rDS(ON)= 0.100Ω
  • Temperature Compensating PSPICE® Model
  • Can be Driven Directly from CMOS, NMOS, andTTL Circuits
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • 175°C Operating Temperature
  • Related Literature
  • TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”

Applications

  • TBA

Models

For additional information please visit the Models page .

Package & leads Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-252(DPAK)-3 Electrical -55°C to 175°C N/A Orcad 9.1 Jun 08, 2011
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