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RFD16N05LSM − 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
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Product Status/Pricing/Packaging
| Product | Product & Eco Status | *Pricing | Packaging & Packing Info | **Package Marking Convention | Qualification Support | Compliance Certificates |
|---|---|---|---|---|---|---|
| RFD16N05LSM9A |
Full Production ROHS Compliant |
$0.8 | TO-252 3L (DPAK) Details TAPE REEL |
Line 1:$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2:RFD16N
Line 3:05LSM |
FIT :
0.6
RTHETA (JA) : 100 °C/W RƟJC : 2.083 °C/W Show more... |
- Fairchild 1,000 piece Budgetary Pricing. *
- If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
- Top mark packaging information for product RFD16N05LSM is available. **
Features
- 16A, 50V
- rDS(ON)= 0.047Ω
- UIS SOA Rating Curve (Single Pulse)
- Design Optimized for 5V Gate Drives
- Can be Driven Directly from CMOS, NMOS, TTL Circuits
- Compatible with Automotive Drive Requirements
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Devicee
- Related Literature
- TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”
Applications
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Application Notes
| Application Note | Description |
|---|---|
| AN-7533 | A Revised MOSFET Model With Dynamic Temperature Compensation(132 K) 05-Mar-2011 |
| AN-9065 | FRFET® in Synchronous Rectification(156 K) 14-Feb-2013 |
| AN-7510 | A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options(222 K) 05-Mar-2011 |
| AN-558 | Introduction to Power MOSFETs and their Applications(244 K) 03-May-2013 |
| AN-9005 | Driving and Layout Design for Fast Switching Super-Junction MOSFETs(1,778 K) 14-Feb-2013 |
| AN-9010 | MOSFET Basics(361 K) 05-Mar-2011 |
| AN-6099 | New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications(1,172 K) 12-Mar-2013 |
| AN-7517 | Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads(107 K) 05-Mar-2011 |
Models
For additional information please visit the Models page.
| Package | Condition | Temperature Range | Vcc Range | Software Version | Revision Date |
|---|---|---|---|---|---|
| PSPICE | |||||
| TO-252 3L (DPAK) | Electrical | -55°C to 175°C | N/A | Orcad 9.1 | Feb 28, 2012 |
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