RFD16N05SM

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16A, 50V, 0.047 Ohm, N-Channel Power, MOSFETs

General Description

The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
RFD16N05SM9A Full Production ROHS Compliant $0.69 TO-252 3L (DPAK) 3 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:D16N05
FIT :  6.5  
RTHETA (JA) :  100  °C/W
RTHETA (JC) :  2.083  °C/W
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Features

  • 16A, 50V
  • rDS(ON)= 0.047Ω
  • Temperature Compensating PSPICE Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • 175°C Operating Temperature
  • Related Literature
  • TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”

Applications

  • AC-DC Merchant Power Supply - Servers & Workstations
  • Server & Mainframe
  • Workstation

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-252 3L (DPAK) Electrical -55°C to 175°C N/A Orcad 9.1 Feb 28, 2012
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