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RFP70N06 − 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440.
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Product Status/Pricing/Packaging
| Product | Product & Eco Status | *Pricing | Packaging & Packing Info | **Package Marking Convention | Qualification Support | Compliance Certificates |
|---|---|---|---|---|---|---|
| RFP70N06 |
Full Production ROHS Compliant |
$1.38 | TO-220 3L Details RAIL |
Line 1:$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2:RFP70N06
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FIT :
3.9
RTHETA (JA) : 62 °C/W RƟJC : 1 °C/W Show more... |
- Fairchild 1,000 piece Budgetary Pricing. *
- If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
- Top mark packaging information for product RFP70N06 is available. **
Features
- 70A, 60V
- rDS(ON)= 0.014Ω
- Temperature Compensating PSPICE® Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve (Single Pulse)
- 175°C Operating Temperature
- Related Literature
- TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”
Applications
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Application Notes
| Application Note | Description |
|---|---|
| AN-7533 | A Revised MOSFET Model With Dynamic Temperature Compensation(132 K) 05-Mar-2011 |
| AN-6099 | New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications(1,172 K) 12-Mar-2013 |
| AN-9065 | FRFET® in Synchronous Rectification(156 K) 14-Feb-2013 |
| AN-558 | Introduction to Power MOSFETs and their Applications(244 K) 03-May-2013 |
| AN-9005 | Driving and Layout Design for Fast Switching Super-Junction MOSFETs(1,778 K) 14-Feb-2013 |
| AN-7510 | A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options(222 K) 05-Mar-2011 |
| AN-9010 | MOSFET Basics(361 K) 05-Mar-2011 |
| AN-7517 | Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads(107 K) 05-Mar-2011 |
| AN-7516 | Safe Operating Area Testing Without A Heat Sink(69 K) 05-Mar-2011 |
Additional Resources
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