Fairchild Semiconductor
BS170
N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

  • High density cell design for extremely low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.

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Product Status/Pricing/Packaging      buy now

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
BS170Full ProductionRoHS CompliantN/ATO-923BULK PDFLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
Line 2: BS170
BS170_D26ZFull ProductionRoHS Compliant$0.075TO-923TAPE REEL PDFLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
Line 2: BS170
BS170_D27ZFull ProductionRoHS Compliant$0.075TO-923TAPE REEL PDFLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
Line 2: BS170
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product BS170 is available. Click here for more information .

Models

Package & leadsConditionTemperature rangeSoftware versionRevision date
PSPICE
TO-92-3Electrical25°C to 125°COrcad 9.1Aug 6, 2002


Qualification Support

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Product
BS170
BS170_D26Z
BS170_D27Z


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