Fairchild Semiconductor
FGH30N60LSD
PDD IGBT

General Description

The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

Features

  • Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
  • High Input Impedance
  • Low Conduction Loss
  • Applications

  • Solar inverters
  • UPS, Welder
  • space

    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FGH30N60LSDTUFull ProductionRoHS Compliant$9.04TO-2473RAIL N/ALine 1: $Y (Fairchild logo)
    &Z (Asm. Plant Code)
    &3 (3-Digit Date Code)
    &K Line 2: FGH30N60 Line 3: LSD
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FGH30N60LSD is available. Click here for more information .


    Qualification Support

    Click on a product for detailed qualification data

    Product
    FGH30N60LSDTU


    è Copyright 2008 Fairchild Semiconductor