Fairchild Semiconductor
FQB32N12V2
120V N-Channel Advanced QFET V2 series

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.

Features

  • 32 A, 120V
    • RDS(on) = 0.05W @ VGS = 10V
  • Low gate charge (typical 41 nC)
  • Low Crss (typical 70 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

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Product Status/Pricing/Packaging      buy now

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
FQB32N12V2TMFull ProductionRoHS Compliant$1.40TO-263(D2PAK)2TAPE REEL TBDLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&E&3 (3-Digit Date Code)
Line 2: BV2 Line 3: 32N12
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FQB32N12V2 is available. Click here for more information .


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Product
FQB32N12V2TM


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