Product Folder - FQB6N40C - 400V N-Channel Advance Q-FET C-Series

FQB6N40C
400V N-Channel Advance Q-FET C-Series

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

Features

6 A, 400V, R_DS(on) = 1.0W @VGS = 10 V
Low gate charge (typical 16 nC)
Low Crss (typical 15pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

Product Status/Pricing/Packaging

Product	Product status	Eco Status	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FQB6N40CTM	Full Production	RoHS Compliant	TO-263(D2PAK)	2	TAPE REEL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FQB Line 3: 6N40C

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FQB6N40C is available. Click here for more information .

Models

Package & leads	Condition	Temperature range	Vcc range	Software version	Revision date
PSPICE
TO-263(D2PAK)-2	Electrical/Thermal	-55°C to 150°C	0V to 50V	9.2	Jun 23, 2005

Qualification Support

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Product
FQB6N40CTM