Fairchild Semiconductor
FQP10N20C
200V N-Channel Advance Q-FET C-Series

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

Features

  • 9.5A, 200V, RDS(on) = 0.36W@VGS = 10V
  • Low gate charge ( typical 20 nC)
  • Low Crss ( typical 40.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

space

Product Status/Pricing/Packaging      buy now

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
FQP10N20CFull ProductionRoHS Compliant$0.51TO-2203RAIL N/ALine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&E&3 (3-Digit Date Code)
Line 2: FQP Line 3: 10N20C
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FQP10N20C is available. Click here for more information .


Qualification Support

Click on a product for detailed qualification data

Product
FQP10N20C


è Copyright 2008 Fairchild Semiconductor