Fairchild Semiconductor
FQP6N40C
400V N-Channel Advance Q-FET C-Series

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

Features

  • 6A, 400V, RDS(on) = 1.0 @VGS = 10 V
  • Low gate charge ( typical 16 nC)
  • Low Crss ( typical 15 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

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Product Status/Pricing/Packaging      buy now

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
FQP6N40CFull ProductionRoHS Compliant$0.78TO-2203RAIL N/ALine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&E&3 (3-Digit Date Code)
Line 2: FQP Line 3: 6N40C
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FQP6N40C is available. Click here for more information .


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FQP6N40C


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