Fairchild Semiconductor
FQPF13N50CF
500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features

  • 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V
  • Low gate charge (typical 43 nC)
  • Low Crss (typical 20pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • Fast recovery body diode (typical 100ns)
  • space

    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FQPF13N50CFFull ProductionRoHS Compliant$1.56TO-220F3RAIL TBDLine 1: $Y (Fairchild logo)
    &Z (Asm. Plant Code)
    &E&3 (3-Digit Date Code)
    Line 2: FQPF Line 3: 13N50CF
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FQPF13N50CF is available. Click here for more information .


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    Product
    FQPF13N50CF


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