Fairchild Semiconductor
FQPF90N10V2
100V N-Channel Advanced QFET V2 series

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.

Features

  • 90 A, 100V
    • RDS(on) = 0.01W @ VGS = 10V
  • Low gate charge (typical 147 nC)
  • Low Crss (typical 300 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

space

Product Status/Pricing/Packaging      buy now

ProductProduct statusEco StatusPackage typeLeadsPacking methodPackage DrawingPackage Marking Convention**
FQPF90N10V2Lifetime BuyRoHS CompliantTO-220F3RAIL TBDLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&E&3 (3-Digit Date Code)
Line 2: FQPF Line 3: 90N10V2

Package marking information for product FQPF90N10V2 is available. Click here for more information .


Qualification Support

Click on a product for detailed qualification data

Product
FQPF90N10V2


è Copyright 2008 Fairchild Semiconductor