These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

• 5.0 A, 30 V
  • R_DS(ON) = 0.050W @ V_GS = 10 V
  • R_DS(ON) = 0.080W @ V_GS = 4.5 V
• Low gate charge
• Fast switching speed
• High power and current handling capability

• Battery switch
• Load switch
• Motor controls