TIP112
NPN Epitaxial Silicon Darlington Transistor
Features
Monolithic Construction with Built In Base-Emitter Shunt Resistors
Complementary to TIP115/116/117
High DC Current Gain: h
FE
=1000 @ V
CE
=4V, I
C
=1A (Min.)
Low Collector-Emitter Saturation Voltage
Industrial Use