Advanced Packaging Product

The Fairchild Power Discrete Group portfolio is one of the industry's broadest and provides complete discrete product package solutions for the Industrial, Consumer and Automotive markets and leading advanced high-volume package solutions for the Ultra-Portable Communications and Computer markets. These small package products offer superior size, low package profile, and thermal and electrical performance advantages over other discrete products available in the industry for these applications.

MOSFET BGAs combine small footprint, low profile, low R_DS(ON), and low thermal resistance to effectively address the needs of space-sensitive, performance-oriented load management and power conversion applications.

Fairchild's family of BGA products, which are today shipping in high-volume production for a variety of applications, offer superior electrical and thermal performance required for advanced portable products. This advanced performance allows the designer the ability to obtain excellent power dissipation and low loss for power management applications without sacrificing valuable board space or adding unneeded cost to the system. The maximum package height of 0.8 mm to 0.9 mm addresses industry requirements for low-profile packages to allow for thinner product profiles and placement of these devices underneath RF shields internal sub-assemblies.

BGA	Rthjc	Rthja*	Package Dimensions (mm)	Profile (Typ) (mm)	Package Foot Print Area (mm2)
	(° C/W)
	0.3	44	5.0 x 5.5	0.9	27.5
	0.6	56	3.5x 4	0.8	14
	0.6	108	2.5 x 4	0.8	10
	0.7	0.7	2.0 x 2.5	0.8	5
	1	1	2.0 x 2.0	0.8	4
	-	72	1.5 x 1.5	0.8	2.25
*When mounted on a 1 in2 pad of 2 oz. copper.

MOSFET BGA Product Portfolio
MOSFET BGA Design Guide (pdf)
Power BGA
Packaging Specifications
FLMP N & P - Channel MOSFET Packaging
Dual N-Channel MOSFET

Back to top

FLMP N & P - Channel MOSFET Packaging Saves PCB Board Space Without Sacrificing Power Dissipation Capability

Fairchild’s patented FLMP packaging eliminates conventional wire-bonds and also provides an extremely low thermal resistance path between the PCB and the MOSFET die (drain connection). This can greatly improve performance compared to many other MOSFET packages by reducing both the electrical and the thermal constraints. For example, a higher performance package such as the SuperSOT ™-6 FLMP can replace a standard SO-8 and save 70% in board area.

FLMP	Rthja* (° C/W)	Package Dimensions (mm2)	Profile (Typ) (mm)	Package Foot Print Area (mm2)
SC75-6	77	1.6 x 2.0	0.725	3.2
SO-8	40	5 x 6	1.55	30
SSOT-6	68	2.8 x 2.9	0.725	8.1
*When mounted on a 1 in2 pad of 2 oz. copper.

MOSFET FLMP Product Portfolio
Packaging Specifications
MOSFET BGAs
Dual N-Channel MOSFET

Back to top

The Dual N-Channel MOSFET has been designed using the company's advanced Power Trench process to optimize the R_DS(ON) @ V_GS = 2.5V on special MicroFET™ lead frame with all the drains on one side of the package while the Single P-Channel MOSFET has been designed with its drain connected to both sides of the package to facilitate the flow of heat in both directions.

MicroFET	Rthjc	Rthja*	Package Dimensions (mm)	Profile (Typ) (mm)	Package Foot Print Area (mm2)
	(° C/W)
	6	65	3 x 2	1	6
	5	52	3 x 3	1	9
*When mounted on a 1 in2 pad of 2 oz. copper.

Packaging Specifications
MOSFET BGAs
FLMP N & P - Channel MOSFET Packaging

Back to top