Advanced Packaging Product
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Contents |
The Fairchild Power Discrete Group portfolio is one of the industry's broadest and provides complete discrete product package solutions for the Industrial, Consumer and Automotive markets and leading advanced high-volume package solutions for the Ultra-Portable Communications and Computer markets. These small package products offer superior size, low package profile, and thermal and electrical performance advantages over other discrete products available in the industry for these applications.
MOSFET BGAs combine small footprint, low profile,
low RDS(ON), and low thermal resistance to effectively address the
needs of space-sensitive, performance-oriented load management and
power conversion applications.
Fairchild's family of BGA products, which are today shipping in
high-volume production for a variety of applications, offer superior
electrical and thermal performance required for advanced portable
products. This advanced performance allows the designer the ability
to obtain excellent power dissipation and low loss for power management
applications without sacrificing valuable board space or adding
unneeded cost to the system. The maximum package height of 0.8 mm
to 0.9 mm addresses industry requirements for low-profile packages
to allow for thinner product profiles and placement of these devices
underneath RF shields internal sub-assemblies.
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BGA
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Rthjc |
Rthja*
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Package Dimensions
(mm) |
Profile (Typ)
(mm) |
Package
Foot Print Area (mm2) |
| (° C/W) | |||||
![]() |
0.3 | 44 | 5.0 x 5.5 | 0.9 | 27.5 |
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0.6 | 56 | 3.5x 4 | 0.8 | 14 |
![]() |
0.6 | 108 | 2.5 x 4 | 0.8 | 10 |
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0.7 | 0.7 | 2.0 x 2.5 | 0.8 | 5 |
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1 | 1 | 2.0 x 2.0 | 0.8 | 4 |
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- | 72 | 1.5 x 1.5 | 0.8 | 2.25 |
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*When mounted on a 1 in2 pad of 2
oz. copper.
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MOSFET BGA Product Portfolio
Power
BGA
Packaging Specifications
FLMP N & P - Channel MOSFET Packaging
Dual N-Channel MOSFET
FLMP N & P - Channel MOSFET
Packaging Saves PCB Board Space Without Sacrificing Power Dissipation
Capability
Fairchild’s patented FLMP packaging eliminates conventional wire-bonds
and also provides an extremely low thermal resistance path between
the PCB and the MOSFET die (drain connection). This can greatly
improve performance compared to many other MOSFET packages by reducing
both the electrical and the thermal constraints. For example, a
higher performance package such as the SuperSOT -6 FLMP can
replace a standard SO-8 and save 70% in board area.
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FLMP
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Rthja*
(° C/W) |
Package Dimensions (mm2) |
Profile (Typ) (mm) |
Package Foot Print Area (mm2) |
![]() SC75-6 |
77 | 1.6 x 2.0 | 0.725 | 3.2 |
![]() SO-8 |
40 | 5 x 6 | 1.55 | 30 |
![]() SSOT-6 |
68 | 2.8 x 2.9 | 0.725 | 8.1 |
| *When mounted on a 1 in2 pad of 2 oz. copper. | ||||
MOSFET FLMP Product Portfolio
Packaging Specifications
MOSFET BGAs
Dual N-Channel MOSFET
The Dual N-Channel MOSFET has been designed using the company's advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V on special MicroFET lead frame with all the drains on one side of the package while the Single P-Channel MOSFET has been designed with its drain connected to both sides of the package to facilitate the flow of heat in both directions.
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MicroFET
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Rthjc | Rthja* | Package Dimensions (mm) |
Profile (Typ) (mm) |
Package Foot Print Area (mm2) |
| (° C/W) | |||||
| 6 | 65 | 3 x 2 | 1 | 6 | |
| 5 | 52 | 3 x 3 | 1 | 9 | |
| *When mounted on a 1 in2 pad of 2 oz. copper. | |||||
Packaging Specifications
MOSFET BGAs
FLMP N & P - Channel MOSFET Packaging








