Fab 8 Power MOSFET Reliability Summary

Part Number Type Die Type Package
HGTP20N35F3VL 49076 TO-220
Test 7039 Lot 1
Stress Conditions
per AEC Q101
Results Sample
Size
Duration
Thermal Fatigue PD=4.75W, delta Tj=125C 0 120 10,000 Cyc
Drain Bias Tc=175C, Vds=80% Rated 0 120 1000 Hrs
Gate Bias Tc=175C, Vgs=100% Rated 0 120 1000 Hrs
Thermal Shock -65C, +150C, Liquid 0 120 1000 Cyc
Relative Humidity Ta=85C, RH=85% 0 120 1000 Hrs

 

Part Number Type Die Type Package
HGTP20N35F3VL 49076 TO-220
Test 7053 Lot 2
Stress Conditions
per AEC Q101
Results Sample
Size
Duration
Gate Bias Tc=175C, Vgs=100% Rated 0 120 1000 Hrs
Relative Humidity Ta=85C, RH=85% 0 120 1000 Hrs
ESD CDF-AEC-Q101-001 0 10 4KV GE
10KV CE
 
Reverse Battery -20V, 125C 0 60 1 Min
 
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