Fab 8 Power MOSFET Reliability Summary

Part Number Type Die Type Package
RF1S40N10LE 49163 TO-263
Test 7105
Stress Conditions
per AEC Q101
Results Sample
Size
Duration
Thermal Fatigue(1) PD=4.75W, delta Tj=100C 0 40 10,000 Cyc
Drain Bias Tc=175C, Vds=80% Rated 0 77 1000 Hrs
Gate Bias Tc=175C, Vgs=100% Rated 0 77 1000 Hrs
Temp Cycle(1) -55C, +150C, Air 0 77 1000 Cyc
Pressure Cooker(1) Ta=121C, 15psi 0 77 96 Hrs
Relative Humidity(1) Ta=85C, RH=85%, Vds=80V 0 77 1000 Hrs
ESD CDF-AEC-Q101-001 0 10 8000V HBM/400V MM  
Dielectric Integrity CDF-AEC-Q101-004 S3 0 5    
UIS CDF-AEC-Q101-004 S2 0 5T + 5C    
DPA CDF-AEC-Q101-004 S4 0 2    
Thermal Resistance JEDEC 106A 0 30    
Solder Heat JEDEC 24-3,4,6 0 10T + 10C    
Die Shear Mil Std 750 M2037 0 5T + 5C    
Note 1: Preconditioning per AEC J113
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