49385 NCH PWR MOS Reliability Qualification Report - Fairchild Discrete Power

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Power MOSFET Reliability Summary

Part Number Type		Die Type		Package
IRFP460		49385		TO-247
TEST 10080 CELL 1
Stress	Conditions	Results	Sample Size	Duration
IOL	PD=4.0W, delta Tj=100C	0	80	8750	Cyc
HT Drain Bias	Tc=175C, Vds=80% Rated	0	80	1000	Hrs
HT Gate Bias	Tc=175C, Vgs=100% Rated	0	80	1000	Hrs
Temp Cycle	-55C, +150C, Air	0	80	1000	Cyc
Autoclave	Ta=121C, 15psi	0	80	96	Hrs
H³TRB	Ta=85C, RH=85%, Vds=50V	0	80	1000	Hrs
Operating Life	Tj=175C, VDS=15V	0	80	1000	Hrs
Dielectric Integrity	CDF-AEC-Q101-004	0	5

Part Number Type		Die Type		Package
IRFP460		49385		TO-247
TEST 10080 CELL 2
Stress	Conditions	Results	Sample Size	Duration
IOL	PD=4.0W, delta Tj=100C	0	79	8750	Cyc
HT Drain Bias	Tc=175C, Vds=80% Rated	0	79	1000	Hrs
HT Gate Bias	Tc=175C, Vgs=100% Rated	0	79	1000	Hrs
Temp Cycle	-55C, +150C, Air	0	80	1000	Cyc
Autoclave	Ta=121C, 15psi	0	80	96	Hrs
H³TRB	Ta=85C, RH=85%, Vds=50V	0	80	1000	Hrs
Operating Life	Tj=175C, VDS=15V	0	80	1000	Hrs
Dielectric Integrity	CDF-AEC-Q101-004	0	5