NCH PWR MOS STD Gate - TO-251 Reliability Report

POWER DEVICE RELIABILITY SUMMARY

DEVICE POWER MOS		PACKAGE TO-251
PROCESS HIGH VOLTAGE NCH PWR MOS STD GATE
APPLIED STRESS	FAILURES	SAMPLE	CUM. TIME
THERMAL FATIGUE Pd=2 w, Delta=100 deg c.	0	160	1920000	CYS
OPERATING LIFE 15 volts, T=200 deg c.	0	80	40000	HRS
HIGH TEMP REV BIAS 80% Rated voltage, 150 deg c.	0	80	40000	HRS
HIGH TEMP GATE BIAS 100% Rated voltage, 150 deg c.	0	80	40000	HRS
STORAGE LIFE T=200 deg c.	0	80	40000	HRS
THERMAL SHOCK -65 to 250 deg c. Liq/Liq.	0	80	48000	CYS
AUTOCLAVE T=121 deg c, 15 psig	0	80	7680	HRS
FAILURE RATE @ 55 Deg. C, 60% Confidence, 1.0 EV Activation: 8.205258 FIT